Title :
A 4K static 5-V RAM
Author :
Schlageter, J. ; Jayakumar, Nikhil ; Kroeger, J. ; Sarkissian, V.
Author_Institution :
Advanced Micro Devices, Inc., Sunnyvale, CA, USA
Abstract :
This paper will cover a 4K bit, static, TTL compatible, 5-V only, MOS RAM with typical dissipation and access of 350 mW and 150 ns, respectively.
Keywords :
Circuits; Clocks; Decoding; Latches; Logic devices; Output feedback; Oxidation; Random access memory; Read-write memory; Timing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155558
