Title :
A novel technology for in situ MIC growth of low temperature nano/poly silicon thin film on ITO glass substrate
Author :
Juang, Feng-Renn ; Fang, Yean-Kuen ; Zhong, Yong-Jie
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ. Tainan, Tainan, Taiwan
Abstract :
A novel method is applied to grow nano/poly Si thin films on ITO glass at temperature ~200°C. For the first time, through the in situ indium (In)-induced crystallization process, the nano/poly structure can be achieved during the growing amorphous Si by PECVD. SEM, XRD and Raman are used to characterize the deposited films. Besides, the growing mechanisms are also studied.
Keywords :
crystallisation; glass; nanostructured materials; plasma CVD; substrates; ITO glass substrate; PECVD; SEM; XRD; crystallization process; in situ MIC growth; low temperature nano/poly silicon thin film; Annealing; Films; Glass; Indium tin oxide; Microwave integrated circuits; Plasma temperature; Silicon; AZO; ITO; MIC; PECVD; nano/poly silicon;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991664
