Title :
High-gain 1-W FET amplifier operating in G band
Author :
Sechi, F. ; Paglione, R.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Abstract :
A hybrid integrated FET amplifier producing 1 W over a 4.4 - 5.0 GHz frequency range with 34-dB gain and an overall efficiency of 16% will be described. Unit is well suited to replace TWTAs in systems requiring high linear performance.
Keywords :
Bandwidth; Broadband amplifiers; FETs; Gain; High power amplifiers; Noise figure; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155562
