DocumentCode :
2861399
Title :
Investigation of post-annealing treatment on barrier layers for passivation flexible organic light-emitting diode
Author :
Chou, D.W. ; Chen, Kan-Lin ; Huang, Chien-Jung ; Meen, Teen-Hang ; Chen, Wen-Ray ; Yang, Cheng-Fu
Author_Institution :
Dept. of Aviation & Commun. Electron., Air Force Inst. of Technol., Kaohsiung, Taiwan
fYear :
2011
fDate :
21-24 June 2011
Firstpage :
1
Lastpage :
3
Abstract :
Fluorinated silicon dioxide films by liquid phase deposition method were coated on plastic substrate as a moisture barrier layer. By the measurement of Fourier transform infrared absorption spectroscopy, the water-absorbed related peak was found after severe water-vapor test. After annealing under N2 ambiences, the water-absorbed related peaks disappear and ability of resisting water absorption can be enhanced.
Keywords :
Fourier transform spectra; annealing; fluorine; infrared spectra; liquid phase deposited coatings; organic light emitting diodes; passivation; silicon compounds; thin films; Fourier transform infrared absorption spectroscopy; SiO2:F; fluorinated silicon dioxide films; liquid phase deposition method; moisture barrier layer; passivation flexible organic light-emitting diode; plastic substrate; post-annealing treatment; resisting water absorption; water-vapor test; Absorption; Annealing; Films; Plastics; Silicon compounds; Substrates; Vibrations; Fluorinated silicon dioxide; liquid phase deposition; moisture absorption; plastic substrate; post-annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
ISSN :
2159-3523
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2011.5991669
Filename :
5991669
Link To Document :
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