Title :
X-band GaAs Schottky barrier power FET with a high drain source breakdown voltage
Author :
Fukuta, Masahiro ; Suyama, Koichi ; Suzuki, Hajime ; Nakayama, Yoshinori ; Ishikawa, Hiroshi
Author_Institution :
Fujitsu Laboratories, Kawasaki, Japan
Abstract :
This paper will describe a GaAs FET exhibiting 2.2-W output power at 1-dB gain compression with 21.6% power added efficiency at 8 GHz, developed by the introduction of N+buried layers into source and drain regions.
Keywords :
Circuit testing; Electrodes; Electrons; Etching; FETs; Gallium arsenide; MESFETs; Power generation; Schottky barriers; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155564
