Title :
A high-power microwave GaAs FET oscillator
Author :
Abe, H. ; Takayama, Yoichiro ; Higashisaka, A. ; Yamamoto, Ryo ; Takeuchi, Masaru
Author_Institution :
Nippon Electric Co., Ltd., Kawasaki, Japan
Abstract :
An integrated circuit GaAs FET with an oscillator power output of 220 mW and a power-added efficiency of 21% obtained at 6 GHz, will be discussed.
Keywords :
Electrodes; Feedback; Frequency; Gain; Gallium arsenide; Impedance; Microwave FETs; Microwave oscillators; Power generation; Stripline;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155566
