A high-power microwave GaAs FET oscillator

Author

Abe, H. ; Takayama, Yoichiro ; Higashisaka, A. ; Yamamoto, Ryo ; Takeuchi, Masaru

Author_Institution

Nippon Electric Co., Ltd., Kawasaki, Japan

Volume

XIX

fYear

1976

fDate

18-20 Feb. 1976

Firstpage

164

Lastpage

165

Abstract

An integrated circuit GaAs FET with an oscillator power output of 220 mW and a power-added efficiency of 21% obtained at 6 GHz, will be discussed.

Keywords

Electrodes; Feedback; Frequency; Gain; Gallium arsenide; Impedance; Microwave FETs; Microwave oscillators; Power generation; Stripline;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

DOI

10.1109/ISSCC.1976.1155566

Filename

1155566

Link To Document