Title :
Electron beam-accessed data storage in MOS capacitors
Author :
Arntz, F. ; Rockstad, H. ; Smith, D. ; Sah, C.
Author_Institution :
Micro-Bit Corp., Lexington, MA, USA
Abstract :
Electron beam access to nonvolatile block-organized data stored on 6-μm centers has been accomplished with 15 μs latency and 32 Mb/s system throughput. Mechanisms internal to the MOSC target will be described and ultimate limitations to data packing, latency, READ and WRITE throughputs reviewed.
Keywords :
Electron beams; Electron optics; Electron tubes; Image storage; MOS capacitors; Memory; Microwave amplifiers; Physics; Semiconductor optical amplifiers; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155569
