Title :
Monolithic temperature stabilized voltage reference with 0.5 ppm/ ° drift
Author_Institution :
National Semiconductor Corp., Santa Clara, CA, USA
Abstract :
This paper will cover a temperature-stabilized voltage reference which achieves a 0.5 ppm/°C temperature coefficient. A subsurface zener structure to minimize noise and enhance long term stability will be described.
Keywords :
Breakdown voltage; Circuits; Frequency; Low-frequency noise; Packaging; Power dissipation; Stability; Temperature distribution; Thermal resistance; Wideband;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155572
