Title :
Nanopatterned p-i-n solar cells with the fast carrier transit time and low reflectivity
Author :
Hsu, Shao-Shun ; Hung, Yen-Jen ; Wang, Yu-Ting ; Huang, Jian-Jang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We investigated the reflectivity and carrier response time of the nano-patterned n-ZnO/a-Si(i)/p+-Si hetero-junction photodiodes. Comparing with the conventional planar structure n-ZnO/a-Si/p+-Si hetero-junction photodiodes, we found better electrical and optical performance for the nano-patterned photodiodes. The concept of the lower reflectivity and the shorter response time of our nano-patterned structure can be applied to have better efficiency than the conventional solar cells.
Keywords :
II-VI semiconductors; amorphous semiconductors; elemental semiconductors; p-i-n photodiodes; reflectivity; silicon; solar cells; wide band gap semiconductors; zinc compounds; ZnO-Si-Si; carrier response time; conventional planar structure heterojunction photodiodes; electrical performance; fast carrier transit time; low reflectivity; nanopatterned p-i-n solar cells; optical performance; Nanoscale devices; Optical surface waves; Photodiodes; Photovoltaic cells; Reflectivity; Surface morphology; Time factors; nanoparticle; nanostructure; solar cells;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991684
