Nanopatterned p-i-n solar cells with the fast carrier transit time and low reflectivity

Author

Hsu, Shao-Shun ; Hung, Yen-Jen ; Wang, Yu-Ting ; Huang, Jian-Jang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

We investigated the reflectivity and carrier response time of the nano-patterned n-ZnO/a-Si(i)/p⁺-Si hetero-junction photodiodes. Comparing with the conventional planar structure n-ZnO/a-Si/p⁺-Si hetero-junction photodiodes, we found better electrical and optical performance for the nano-patterned photodiodes. The concept of the lower reflectivity and the shorter response time of our nano-patterned structure can be applied to have better efficiency than the conventional solar cells.

Keywords

II-VI semiconductors; amorphous semiconductors; elemental semiconductors; p-i-n photodiodes; reflectivity; silicon; solar cells; wide band gap semiconductors; zinc compounds; ZnO-Si-Si; carrier response time; conventional planar structure heterojunction photodiodes; electrical performance; fast carrier transit time; low reflectivity; nanopatterned p-i-n solar cells; optical performance; Nanoscale devices; Optical surface waves; Photodiodes; Photovoltaic cells; Reflectivity; Surface morphology; Time factors; nanoparticle; nanostructure; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991684

Filename

5991684