Title :
Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films
Author :
Chen, H.W. ; Hsu, H.W. ; Chen, S.Y. ; Huang, H.S. ; Wang, M.C. ; Liu, C.H.
Author_Institution :
Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol. (NTUT), Taipei, Taiwan
Abstract :
Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposited (ALD) LaO/HfZrO stacked gate dielectrics were fabricated. The experimental results reveal that the equivalent oxide thickness (EOT) is 0.65 nm, and the gate leakage current density (Jg) is only 1.9 A/cm2. The main current conduction mechanisms are Schottky emission, Poole-Frankel emission, and Fowler-Nordheim tunneling. The barrier height (ΦB) is estimated to be about 1.07 eV at TaC and HfZrLaO interface.
Keywords :
MOS capacitors; Poole-Frenkel effect; Schottky effect; atomic layer deposition; hafnium compounds; high-k dielectric thin films; leakage currents; tunnelling; zirconium compounds; EOT; Fowler-Nordheim tunneling; HfZrLaO; MOS capacitors; Poole-Frankel emission; Schottky emission; atomic-layer-deposited stacked gate dielectrics; current conduction mechanisms; equivalent oxide thickness; gate leakage current density; metal-oxide-semiconductor capacitors; size 0.65 nm; thin films; Dielectrics; Electric fields; Hafnium compounds; Logic gates; Tunneling; Zirconium; HfZrLaO; carrier transportation; conduction mechanism; high-K; metal gate;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991686
