An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3 MOS schottky structure

Author

Das, Atanu ; Chang, Liann Be ; Lin, Ray Ming ; Maikap, Siddheswar

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd₂O₃ MOS Schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as -40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.

Keywords

III-V semiconductors; MIS structures; aluminium compounds; electron traps; gadolinium compounds; gallium compounds; wide band gap semiconductors; write-once storage; GaN-AlGaN-Gd₂O₃; MOS Schottky structure; WORM memory; charge retention; charge trapping; electron trapping; hysteresis window; positive pulse programming; time dependent natural charge loss; voltage 4.4 V; write once read many; Aluminum gallium nitride; Capacitance-voltage characteristics; Charge carrier processes; Films; Gallium nitride; Hysteresis; Logic gates; Charge trapping; GaN/AlGaN; memory; retention;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991688

Filename

5991688