Metal-semiconductor-metal electron detector with nano-hole array structure to improve the electricity characteristic and enhance the performance

In this work, we first fabricated the conventional metal-semiconductor-metal (MSM) interdigitated electron detector with aluminum contact as the control group, then used e-beam lithography system and reactive ion etcher (RIE) to fabricate nano-hole array structure on the contact area and used RIE to fabricate the periodic rectangle trench in the active area of the electron detector as another MSM interdigitated electron detector at the same time as the experimental group. According to the experimental data, we found that the electricity characteristic and the performance of the electron detector with nano-hole array structure which were better than those without the nano-hole array structure.