Title :
A 120-V micropower CMOS tactile display driver
Author :
May, G. ; Gheewals, T. ; Shimizu, M. ; Melen, R.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
A report on a CMOS 120-V tactile display driver utilizing deep junctions, polysilicon field plate and trichlor-ethylene-gate oxidation for higher breakdown voltage, faster junction breakdown walkout with lower hot electron injection current in the oxide.
Keywords :
Breakdown voltage; CMOS process; Dielectric breakdown; Displays; Driver circuits; Electric breakdown; Low voltage; MOS capacitors; Oxidation; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1976 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1976.1155586
