Title :
The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position
Author :
Juan, P.C. ; Chien, Y.S. ; Lin, J.Y. ; Cheng, C.P. ; Liu, C.H. ; Hsu, H.W. ; Chen, H.W. ; Huang, H.S.
Author_Institution :
Dept. of Mater. Eng., Ming Chi Univ. of Technol., Taipei, Taiwan
Abstract :
In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.
Keywords :
X-ray diffraction; crystallisation; hafnium compounds; lanthanum; sputtering; HfO2; X-ray diffraction; crystallization temperature; electrical properties; lanthanum doping position; nano-Auger analysis; physical properties; thin film; Hafnium compounds; Silicon; Substrates; Thermal stability; X-ray diffraction; X-ray scattering; HfLaO; HfO2; X-ray diffraction (XRD); nono-Auger;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991692
