Title :
Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics
Author :
Liu, C.H. ; Chen, Y.L. ; Cheng, C.P. ; Chen, H.W. ; Hsu, H.W. ; Chen, S.Y. ; Huang, H.S. ; Wang, M.C.
Author_Institution :
Dept. of Mechatron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.
Keywords :
MOS capacitors; dielectric materials; hafnium compounds; lanthanum compounds; zirconium compounds; HfZrLaO; MOS capacitors; high-κ gate dielectrics; metal-oxide-semiconductor capacitors; time dependent dielectric breakdown characteristics; ultra-thin gate dielectrics; Capacitors; Hafnium compounds; Logic gates; Stress; Temperature; Weibull distribution; HfLaO; HfZrLaO; time dependent dielectric breakdown (TDDB);
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991693
