Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Author

Liu, C.H. ; Chen, Y.L. ; Cheng, C.P. ; Chen, H.W. ; Hsu, H.W. ; Chen, S.Y. ; Huang, H.S. ; Wang, M.C.

Author_Institution

Dept. of Mechatron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

Keywords

MOS capacitors; dielectric materials; hafnium compounds; lanthanum compounds; zirconium compounds; HfZrLaO; MOS capacitors; high-κ gate dielectrics; metal-oxide-semiconductor capacitors; time dependent dielectric breakdown characteristics; ultra-thin gate dielectrics; Capacitors; Hafnium compounds; Logic gates; Stress; Temperature; Weibull distribution; HfLaO; HfZrLaO; time dependent dielectric breakdown (TDDB);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991693

Filename

5991693