Title :
Nano fabrication analysis of RF NEMS switch
Author :
Yang, Yi Xiu ; Rahman, Hamood Ur ; Ramer, Rodica
Author_Institution :
Sch. of Electr. Eng. & Telecommun., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
This paper presents fabrication analysis of a silicon-based RF NEMS switch. The nano structure is fabricated using surface micromachining approach. Electron beam lithography is introduced as mask-less pattern generator. During the nano fabrication, proximity effect is optimized by dose-shape correction method. Field stitching errors optimization and minimum feature adjustment are also discussed in the paper.
Keywords :
electron beam lithography; elemental semiconductors; micromachining; microswitches; nanoelectromechanical devices; nanofabrication; proximity effect (lithography); silicon; RF NEMS switch; Si; dose-shape correction method; electron beam lithography; field stitching errors optimization; mask-less pattern generator; minimum feature adjustment; nanofabrication analysis; nanostructure; proximity effect; surface micromachining approach; EBL; NEMS; RF nano switch; silicon-based; surface micromachining;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991701
