Title :
The analysis of AZO films made by a magnetic controlled DC sputtering system
Author :
Shih, Neng Fu ; Zhang, Yue-Xun ; Lin, Chung-Hsuan
Author_Institution :
Dept. of Electron. Eng., Hsiuping Inst. of Technol., Taichung, Taiwan
Abstract :
Magnetic controlled dc sputtering method was used in the deposition of Al-doped ZnO (AZO) transparent conducting thin films. Effects of different process parameters, such as working pressure and substrate temperature, and compare properties of AZO films with RF sputtering in order to obtain best process parameters. Over 80% the transmittance of AZO film are observed at visible region (380 ~ 780 nm) with DC sputtering. The refraction decreased with increasing substrate temperature while the grain size, carrier concentration and carrier mobility increased with increasing substrate temperature.
Keywords :
II-VI semiconductors; aluminium; carrier density; carrier mobility; grain size; semiconductor doping; semiconductor thin films; sputter deposition; visible spectra; wide band gap semiconductors; zinc compounds; AZO films; Al-doped ZnO; ZnO:Al; carrier concentration; carrier mobility; grain size; magnetic controlled DC sputtering system; substrate temperature; thin film deposition; transparent conducting thin films; visible region; wavelength 380 nm to 780 nm; working pressure; Conductivity; Films; Photonic band gap; Plasma temperature; Sputtering; Substrates; Temperature measurement; Al doped ZnO; magnetic controlled dc sputtering; transparent conducting thin films;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991703
