Heterojunction luminescence of GaN/AlN core-shell nanowire

In this study, catalystic assisted chemical vapor deposition (CVD) method was used in the synthesis of one-dimensional GaN/AlN core-shell heterostructure nano-materials on direct reactions of ammonia and source materials at elevated temperatures. The inspections show that CVD process was successfully demonstrated to synthesize high-quality GaN/AlN core-shell nanowire with uniform diameter and smooth surface. The length of these coaxial nanowires is in the range of few microns and the diameter is around 148 nm. TEM images conforms its single-crystalline wurtzite structure. Optical properties of these coaxial GaN/AlN nanowires were investigated by photoluminescence, which shows that the range of optical performance is blue light to ultraviolet radiation.