Characterization of power MOSFETs in high commutation level

Author

Simas, M.I. ; Piedade, M.S. ; Freire, J.C.

Author_Institution

Inst. National de Investigacao Cientifica, Lisboa, Portugal

fYear

1988

fDate

11-14 April 1988

Firstpage

667

Abstract

An experimental method for the characterization and modeling of power MOS switching transistors is presented. The method provides a simple but accurate characterization of MOSFETs without the need to know any technological parameter. The accuracy of the model, which has been implemented in the SPICE program, is confirmed by the good agreement between computer simulation and experimental results. The modeling technique is very useful for the precise analysis and design of high-efficiency power converters and switching power amplifiers, and has been applied to a quasi-resonant high-frequency converter that uses a MOSFET, with excellent results.

Keywords

circuit analysis computing; commutation; digital simulation; insulated gate field effect transistors; power amplifiers; power convertors; power transistors; semiconductor device models; SPICE program; computer simulation; high commutation level; high-efficiency power converters; modeling technique; power MOS switching transistors; power MOSFET; quasi-resonant high-frequency converter; switching power amplifiers; Capacitance; Frequency conversion; MOSFETs; Power semiconductor switches; Resistors; SPICE; Switching circuits; Switching converters; Threshold voltage; VHF circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE

Conference_Location

Kyoto, Japan

Type

conf

DOI

10.1109/PESC.1988.18194

Filename

18194