Title :
Characterization of power MOSFETs in high commutation level
Author :
Simas, M.I. ; Piedade, M.S. ; Freire, J.C.
Author_Institution :
Inst. National de Investigacao Cientifica, Lisboa, Portugal
Abstract :
An experimental method for the characterization and modeling of power MOS switching transistors is presented. The method provides a simple but accurate characterization of MOSFETs without the need to know any technological parameter. The accuracy of the model, which has been implemented in the SPICE program, is confirmed by the good agreement between computer simulation and experimental results. The modeling technique is very useful for the precise analysis and design of high-efficiency power converters and switching power amplifiers, and has been applied to a quasi-resonant high-frequency converter that uses a MOSFET, with excellent results.
Keywords :
circuit analysis computing; commutation; digital simulation; insulated gate field effect transistors; power amplifiers; power convertors; power transistors; semiconductor device models; SPICE program; computer simulation; high commutation level; high-efficiency power converters; modeling technique; power MOS switching transistors; power MOSFET; quasi-resonant high-frequency converter; switching power amplifiers; Capacitance; Frequency conversion; MOSFETs; Power semiconductor switches; Resistors; SPICE; Switching circuits; Switching converters; Threshold voltage; VHF circuits;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18194
