Title :
High-performance Ni/SiO2/Si programmable metallization cell
Author :
Lin, Kuan-Liang ; Tseng, Yi-Ming ; Lin, Jun-Hung ; Shieh, Jiann ; Lee, Yao-Jen ; Hou, Tuo-Hung ; Lei, Tan-Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Resistive switching in Ni/SiO2/Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO2 and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ~400, excellent data retention, and good immunity to read disturbance, are also revealed.
Keywords :
nickel; random-access storage; silicon compounds; Joule-heating effect; Ni-SiO2-Si; cathode forming filaments; cations migration; data retention; negative voltages; positive voltages; programmable metallization cell; resistive-switching random access memory; Cathodes; Nickel; Resistance; Silicon; Switches; Joule-heating effect; Ni filament; SiO2; programmable metallization cell; resistive switching;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991718
