Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels

Author

Tuan-Kai Su ; Tsai, Tzu-I ; Chun-Jung Su ; Lin, Horng-Chih ; Huang, Tiao-Yuan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

In this paper, we demonstrate a junctionless (JL) polysilicon-oxide-nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.

Keywords

carrier density; elemental semiconductors; nanowires; semiconductor device reliability; semiconductor doping; silicon; unijunction transistors; JL device; NW transistor; SONOS poly-silicon nanowire transistor; carrier concentration; channel regions; characterization; data endurance; data retention; doping type; drive current; fabrication; junctionless SONOS transistor; junctionless polysilicon-oxide-nitride-oxide-silicon; memory reliability characteristics; poly-silicon nanowire channels; program efficiency; source/drain; undoped channel; Fabrication; Logic gates; Nanoscale devices; Nonvolatile memory; SONOS devices; Silicon compounds; Thin film transistors; SONOS; junctionless; nanowire;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991721

Filename

5991721