DocumentCode
2862307
Title
Low on-resistance and high-reliability power MOSFETs
Author
Yoshida, Isao ; Morikawa, Masatoshi ; Ohtaka, Shigeo ; Okabe, Takeaki
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1988
fDate
11-14 April 1988
Firstpage
674
Abstract
Techniques for the design of scaled-down cell-structure power MOSFETs with low on-resistance and high reliability are described. The cell structure is optimized by a three-dimensional computer analysis. The thin gate oxide is protected using a polysilicon protection diode. A planar device with a breakdown voltage of 50 V and an on-resistance of 150 m Omega -mm/sup 2/ has been realized.<>
Keywords
circuit analysis computing; insulated gate field effect transistors; power transistors; reliability; 50 V; breakdown voltage; cell structure; high-reliability; low on-resistance; planar device; polysilicon protection diode; power MOSFET; thin gate oxide; three-dimensional computer analysis; Automobiles; Breakdown voltage; Diodes; Laboratories; MOSFETs; Power electronics; Power supplies; Power system stability; Protection; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/PESC.1988.18195
Filename
18195
Link To Document