Title :
A fast 1024-bit bipolar RAM using JFET load devices
Author :
Phan, M. ; Shier, J. ; Evans, A.
Author_Institution :
Intersil, Inc., Cupertino, CA, USA
Keywords :
Bipolar integrated circuits; Doping; Ion implantation; JFET integrated circuits; Parasitic capacitance; Random access memory; Read-write memory; Resistors; Schottky diodes; Substrates;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155633
