Manufacture and characterization of the single ZnO nanorod field-effect transistor

In this study, the zinc oxide (ZnO) nanorods (NRs) arrays were synthesized and applied in field-effect transistors (FET). The single crystalline ZnO NRs arrays were synthesized on p⁺-Si substrate without seed layer by using the low-cost and low-temperature hydrothermal method. The substrate surface was functionalized by hydrofluoric acid (HF) and self-assembled monolayer (SAM) of octadecyltrimethoxysilane [(CH₃(CH₂)₁₇Si(OCH₃)₃, ODS]. ZnO NRs were characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM). The results of FESEM and XRD indicate that it is possible to grow high-isotropic one-dimensional ZnO NRs arrays on the functionalized p⁺-Si surface. The fabrication and characteristics of single ZnO NR FET was done. The ZnO NR is n-type semiconductor material determined by FET operation mode. The single ZnO NRs FET possesses the electron mobility, electron concentration, and resistivity of 40.16 cm²/Vs, 1.06×10¹⁵ cm^-3, and 1.46×10² Ω-cm, respectively.