Title :
Lasing action in optically pumped Ga(NAsP) /GaP heterostructures
Author :
Borck, S. ; Heber, J. ; Kunert, B. ; Volz, K. ; Stolz, W. ; Chatterjee, S. ; Rühle, W.W.
Author_Institution :
Fac. of Phys. & Mater. Sci. Center, Philipps-Univ. Marburg, Marburg
Abstract :
We report lasing of optically pumped Ga(AsNP)/GaP multiple quantum-well structures grown pseudomorphically on GaP substrate. A distinct threshold behaviour is observed at both cryogenic and room temperature; modal gain of up to 20 cm-1 is determined.
Keywords :
III-V semiconductors; cryogenics; gallium arsenide; gallium compounds; laser beams; optical pumping; quantum well lasers; semiconductor growth; Ga(NAsP)-GaP; GaP; cryogenic temperature; distinct threshold behaviour; multiple quantum-well structure growth; optically pumped heterostructure lasing action; room temperature; temperature 293 K to 298 K; Epitaxial growth; Laser excitation; Optical materials; Optical pulse generation; Optical pumping; Quantum well lasers; Semiconductor materials; Spectroscopy; Substrates; Temperature; (140.5960) semiconductor lasers; (300.6470) semiconductor spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627686
