DocumentCode :
2862498
Title :
Cation-based resistive memory
Author :
Kozicki, Michael N.
Author_Institution :
Center for Appl. Nanoionics, Arizona State Univ., Tempe, AZ, USA
fYear :
2011
fDate :
21-24 June 2011
Firstpage :
1
Lastpage :
3
Abstract :
This paper describes cation-based resistive memory, which utilizes a high resistance silver- or copper-containing oxide or higher chalcogenide electrolyte sandwiched between oxidizable and inert electrodes. Device function is via ion transport and redox reactions which form or dissolve a conductive metallic bridge. The on-state resistance is controlled by the programming conditions, allowing multi-level/multi-bit storage via discrete resistance states. A doped Si electrode may be used with the on-state filament to create an integrated rectifying isolation element which potentially allows multi-layer compact passive structures to be fabricated. The paper features foundry-produced arrays as well as some of the latest research findings on devices that utilize Ag-Ge-S and Cu-SiO2 ion conducting films.
Keywords :
copper compounds; electrolytes; germanium compounds; oxidation; positive ions; random-access storage; silicon compounds; silver compounds; Ag-Ge-S; Cu-SiO2; cation-based resistive memory; chalcogenide electrolyte; conductive metallic bridge; copper-containing oxide; device function; discrete resistance state; doped Si electrode; foundry-produced arrays; inert electrode; integrated rectifying isolation element; ion conducting film; ion transport; multibit storage; multilevel storage; on-state filament; on-state resistance; oxidizable; programming condition; redox reaction; silver-containing oxide; Copper; Electrodes; Programming; Resistance; Schottky diodes; Silicon; Switches; Ionic memory; Programmable Metallization Cell; multi-level cell and active and passive arrays; resistance change;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
ISSN :
2159-3523
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2011.5991737
Filename :
5991737
Link To Document :
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