Effect of annealing ambient on the characteristics of a-IGZO thin film transistors

Author

Lin, Cheng-I ; Yen, Tung-Wei ; Lin, Horng-Chih ; Huang, Tiao-Yuan ; Lee, Yee-Shin

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2011

fDate

21-24 June 2011

Firstpage

1

Lastpage

2

Abstract

We investigated the characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) whose channel was deposited with different oxygen flows, and were annealed at different annealing temperatures and ambient. This study indicates that annealing in forming gas and oxygen ambient indeed improve the transfer characteristics, resulting in better threshold voltage (Vth) and sub-threshold swing (SS), compared with those by high vacuum annealing.

Keywords

II-VI semiconductors; annealing; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; a-IGZO thin film transistors; amorphous indium gallium zinc oxide; annealing ambient; annealing temperatures; gas ambient; oxygen ambient; sub-threshold swing; threshold voltage; Annealing; Electrodes; Films; Logic gates; Nanoscale devices; Temperature; Thin film transistors; TFT; a-IGZO; annealing ambient;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Conference_Location

Tao-Yuan

ISSN

2159-3523

Print_ISBN

978-1-4577-0379-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2011.5991738

Filename

5991738