DocumentCode
2862516
Title
InGaAsN/GaAsSb/GaAs(P) Type-II ‘W’ quantum well lasers
Author
Mawst, L.J. ; Yeh, J.Y. ; Xu, D.P. ; Park, J.H. ; Huang, J. ; Khandekar, A. ; Kuech, T.F. ; Tansu, N. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution
Dept. of Electr. Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
InGaAsN/GaAsSb dasiaWpsila type-II strain compensated quantum well lasers on GaAs substrates are grown by MOCVD. Preliminary lasers with 3-stage active regions exhibit emission that is blue-shifted from the PL, due to charge separation and higher-energy transitions.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; InGaAsN-GaAsSb-GaAs; MOCVD; blue shifted; charge separation; higher energy transitions; quantum well lasers; Biology computing; Capacitive sensors; Chemical lasers; Laser transitions; Optical materials; Photonic band gap; Quantum computing; Quantum well lasers; Semiconductor lasers; Stimulated emission; (140.2020) Diode Lasers; (140.5960) Semiconductor Lasers; (230.0250) Optoelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627689
Filename
4627689
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