A Novel Three Stage Drive Circuit for IGBT

IGBT is widely applied in converter circuit because of its highly switching speed and easy driving, which brings severe electromagnetic interference (EMI). High and low of the gate drive circuit performance affects the level of EMI. This paper proposed a novel three stage gate control technology for IGBT. It is based on an optimal combination of several requirements necessary for good switching performance under snubberless operation conditions. The control scheme specifically combines together the slow drive requirements for low electromagnetic interference and switching stress and the fast drive requirements for high-speed switching and low switching losses. The gate drive can also effectively dampen current and voltage oscillations generated during turn-on and turn-off respectively. This paper looks at the conflicting requirements of the conventional gate drive circuit design and demonstrates using experimental results that the proposed three-stage gate drive scheme obtains an optimal between switching speed, power dissipation and electromagnetic interference