Title :
Lifetime measurements of excited neutral donor states in GaAs detected by resonant elastic light scattering
Author :
Allen, D.G. ; Kim, S.W. ; Sherwin, M.S.
Author_Institution :
Dept. of Phys., Univ. of California Santa Barbara, Santa Barbara, CA
Abstract :
Recovery of electrons from excited neutral donor states in GaAs is time-resolved using a novel optical readout technique and pulsed terahertz excitation. Long (0.1-1 mus) 2P state lifetimes are measured at various magnetic fields.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; light scattering; magnetic fields; GaAs; excited neutral donor states; lifetime measurements; magnetic fields; optical readout technique; pulsed terahertz excitation; resonant elastic light scattering; Electron optics; Gallium arsenide; Laser excitation; Lifetime estimation; Light scattering; Magnetic field measurement; Optical saturation; Optical scattering; Resonance light scattering; Stationary state; (140.2600) Free Electron Lasers; (300.6470) Spectroscopy, semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627700
