DocumentCode :
2862666
Title :
Nonlinearity consideration of GaN based envelope tracking power amplifiers
Author :
Draxler, P.J. ; Kimball, D.F. ; Asbeck, P.M.
Author_Institution :
Qualcomm, Inc., 5775 Morehouse Dr., San Diego, CA, 92121, USA
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
GaN devices have led to power amplifiers (PA) with exceptional efficiency over very wide operating ranges. Most digital communication signals have a high peak to average ratio, resulting in excessive voltage biasing overhead most of the time. By modulating the power supply voltage to match the needs of the instantaneous RF signal, one can achieve greater efficiency, but this will impact the PA linearity. This paper presents behavioral modeling and digital predistortion techniques being used for envelope tracking GaN PA.
Keywords :
Adaptation models; Gallium nitride; Polynomials; Power supplies; Predistortion; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259364
Filename :
6259364
Link To Document :
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