• DocumentCode
    2862718
  • Title

    The operating mechanism of Schottky-gate nanosensors

  • Author

    Lee, Yun-Ju ; Tung, Hsien-Chin ; Wu, Wen-Wei ; Yeh, Ping-Hung

  • Author_Institution
    Dept. of Phys., Tamkang Univ., Taipei, Taiwan
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The highly sensitive nanowire-based Schottky-gate nanosensors for detecting UV, bio-molecules, and gas sensing were demonstrated. The operating mechanism of the Schottky-gate nanosensors is totally distinct from the conventional Ohmic contacted nanosensors. The Schottky-gated device (SGD) has a few merits in comparison to the conventional Ohmic contacted device (OCD). First, it needs no bio-probe to detect molecules; rather, it depends on the absorption of the charged molecules to the junction region. Second, as for the same type of nanowires, such as ZnO, the sensitivity of the SGD is much higher than that of OCD, because a few molecules at the junction region can change the “gate” that effectively tunes the conductance. This Schottky-gate-modulation based sensing principle can be applied to other materials and sensing systems.
  • Keywords
    gas sensors; molecular biophysics; nanosensors; nanowires; zinc compounds; OCD; SGD; Schottky-gate nanosensors; Schottky-gated device; UV detection; ZnO; biomolecules; gas sensing; nanowire-based Schottky-gate nanosensors; ohmic contacted device; ohmic contacted nanosensors; operating mechanism; Materials; Nanoscale devices; Ohmic contacts; Schottky barriers; Sensors; Temperature; Zinc oxide; Schottky contact; Zinc oxide; nanowire and sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991751
  • Filename
    5991751