DocumentCode
2862718
Title
The operating mechanism of Schottky-gate nanosensors
Author
Lee, Yun-Ju ; Tung, Hsien-Chin ; Wu, Wen-Wei ; Yeh, Ping-Hung
Author_Institution
Dept. of Phys., Tamkang Univ., Taipei, Taiwan
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
The highly sensitive nanowire-based Schottky-gate nanosensors for detecting UV, bio-molecules, and gas sensing were demonstrated. The operating mechanism of the Schottky-gate nanosensors is totally distinct from the conventional Ohmic contacted nanosensors. The Schottky-gated device (SGD) has a few merits in comparison to the conventional Ohmic contacted device (OCD). First, it needs no bio-probe to detect molecules; rather, it depends on the absorption of the charged molecules to the junction region. Second, as for the same type of nanowires, such as ZnO, the sensitivity of the SGD is much higher than that of OCD, because a few molecules at the junction region can change the “gate” that effectively tunes the conductance. This Schottky-gate-modulation based sensing principle can be applied to other materials and sensing systems.
Keywords
gas sensors; molecular biophysics; nanosensors; nanowires; zinc compounds; OCD; SGD; Schottky-gate nanosensors; Schottky-gated device; UV detection; ZnO; biomolecules; gas sensing; nanowire-based Schottky-gate nanosensors; ohmic contacted device; ohmic contacted nanosensors; operating mechanism; Materials; Nanoscale devices; Ohmic contacts; Schottky barriers; Sensors; Temperature; Zinc oxide; Schottky contact; Zinc oxide; nanowire and sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991751
Filename
5991751
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