Title :
Formation of SiGe Nanorod arrays by combining nanoshpere lithography and Au-assisted chemical etching
Author :
Lai, C.H. ; Lee, Y.J. ; Yeh, P.H. ; Lee, S.W.
Author_Institution :
Inst. of Mater. Sci. & Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
SiGe Nanorod (NR) arrays have been fabricated by combining nanosphere lithography and Au-assisted chemical etching. With controlling the etching rate and duration, the length of SiGe NRs can be tuned from 300 nm to 1 μnm. The morphology of SiGe NRs dramatically changed at different operating temperature. The results show a strong temperature dependence on fabrication of SiGe NRs. With TEM and SEM analysis, this work provides an effective approach to design the low-dimensional SiGe-based nanostructures for possible applications.
Keywords :
Ge-Si alloys; etching; nanolithography; nanorods; scanning electron microscopy; transmission electron microscopy; SEM analysis; TEM analysis; chemical etching; etching rate; nanorod arrays; nanoshpere lithography; nanostructures; Chemicals; Etching; Fabrication; Lithography; Nanostructures; Silicon; Silicon germanium;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991752
