Title :
Achieving high-performance poly-Si TFTs by structural engineering
Author :
Lee, Chen-Ming ; Lien, Chih-Fu ; Tsui, Bing-Yue
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
The device performance of various state-of-the-art poly-Si TFTs are reviewed and compared in this paper. Several performance-enhancing methods are also discussed in detail and integrated together to fabricate the high-performance poly-Si TFTs. These experimental results reveal the possibility to realize the poly-Si-based integrated circuits in the future.
Keywords :
elemental semiconductors; silicon; structural engineering; thin film transistors; three-dimensional integrated circuits; Si; device performance; high-performance poly-silicon TFT; performance-enhancing methods; poly-silicon-based integrated circuits; state-of-the-art poly-silicon TFT; structural engineering; Dielectrics; Hafnium compounds; Logic gates; Performance evaluation; Silicon; Thin film transistors; poly-Si thin-film transistors;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991754
