Title :
A high performance 4K static RAM fabricated with an advanced MOS technology
Author :
Pashley, R. ; Owen, W. ; Kokkonen, Kimmo ; Jecmen, R. ; Ebel, A. ; Ahlquist, C. ; Schoen, P.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Keywords :
Active circuits; Circuit optimization; Isolation technology; MOS devices; Power dissipation; Power generation; Random access memory; Read-write memory; Temperature; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155663
