Title :
Semiconductor- and carbon-devices for innovative nanoscale THz sensors and imagers
Author_Institution :
Quantum Nanoelectronics Research Center, Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, 152-8552, Japan
Abstract :
We present terahertz (THz) sensing and imaging technologies based on a carbon nanotube (CNT) and a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. The unique properties of CNT quantum dots have led to the development of a highly sensitive and frequency-selective THz detector. Using the 2DEG THz detector, we have developed a THz near-field imager in which all the components: an aperture, a probe, and a THz detector are integrated on one GaAs/AlGaAs chip. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone.
Keywords :
Apertures; Detectors; HEMTs; MODFETs; Photonics; Probes; Heterojunctions; carbon nanotubes; high-resolution imaging; photodetectors; single electron transistors;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259379
