DocumentCode :
2862969
Title :
Wideband harmonically-tuned GaN Doherty power amplifier
Author :
Bathich, Khaled ; Boeck, Georg
Author_Institution :
Microwave Engineering Lab, Berlin Institute of Technology, 10587, Germany
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band. Suitable choice of device size ratio as well as harmonic load tuning at back-off and maximum power operations were also considered, resulting in superior performance over the targeted design band. The maximum output power ranged from 48.2 dBm to 49.6 dBm. 6 dB back-off efficiencies of η6dB≥53 % (power-added efficiency PAE≥50 %) were measured over 1.7–2.25 GHz (28 % bandwidth). When linearized using digital pre-distortion (DPD), the Doherty amplifier had adjacent-channel leakage ratio (ACLR) of −43 dBc for a long-term evolution (LTE) signal at 1.85 GHz (η=50 %) and −44 dBc for a wideband code-division multiple access (W-CDMA) signal at 2.11 GHz (η=41 %), at average output power of 41.0 dBm and 40.5 dBm, respectively.
Keywords :
Harmonic analysis; Impedance; Linearity; Power amplifiers; Power generation; Wideband; Broadband amplifiers; Doherty amplifier; HEMTs; harmonic tuning; high power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259385
Filename :
6259385
Link To Document :
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