Title :
Fully ion implanted 4096-bit high speed DSA MOS RAM
Author :
Shimotori, K. ; Anami, K. ; Nagayama, Y. ; Okhura, I. ; Ohmori, Masato ; Nakano, T. ; Hayashi, Yasuhiro ; Tarui, Yoichiro
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
Keywords :
Capacitance; Electric variables; FETs; Inverters; Ion implantation; Power dissipation; Propagation delay; Solid state circuits; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155678
