DocumentCode :
2863134
Title :
Safe operating area for bipolar transistors
Author :
Gaur, Surabhi
Author_Institution :
IBM Corp., Poughkeepsie, NY, USA
Volume :
XX
fYear :
1977
fDate :
16-18 Feb. 1977
Firstpage :
40
Lastpage :
41
Keywords :
Bipolar transistors; Circuits; Current density; Current distribution; Electric breakdown; Equations; Semiconductor optical amplifiers; Steady-state; Temperature distribution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1977.1155683
Filename :
1155683
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2863134
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