Electrical properties of a single p-type ZnO nanowire by Ga implantation with FIB

ZnO nanowires were implanted with Ga⁺ ions with a dose of 10¹² cm^-2 and a field effect transistor (FET) device with a single Ga-doped ZnO nanowire was fabricated in a combined scanning-electron-microscope/focused-ion-beam (SEM/FIB) system. Resistance measurements performed on a single Ga-doped ZnO nanowire show the ohmic contact behavior in current-voltage curves. Moreover, resistance roughly tends to decrease with the gate voltage changes from 1V to -6V, indicating the p-type behavior. The electrical activation energy for the hole carriers due to thermal activation is estimated to be ~229.5±2.8 meV.