Title :
Electrical transport in carbon nanotube intermolecular p-n junctions
Author :
Li, Hong ; Zhang, Qing ; Yap, Chin Chong ; Tay, Beng Kang
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Thermionic emission and tunneling are found to be the dominant transport mechanisms under the forward and reverse bias conditions, respectively, in a single-walled carbon nanotube based intermolecular p-n junction. At a reverse bias, the kink point on the plot of ln(I/V2) vs 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler-Nordheim tunneling through the junction barrier. In contrast, the Arrhenius plot of the I-V curve at forward biases shows that tunneling dominates over the thermionic emission below 50 K.
Keywords :
carbon nanotubes; p-n junctions; thermionic emission; tunnelling; electrical transport; intermolecular p-n junction; junction barrier; single-walled carbon nanotube; thermionic emission; tunneling; Carbon nanotubes; Electrodes; Fitting; P-n junctions; Thermionic emission; Tunneling; carbon nanotubes; intermolecular p-n junction; transport mechanism;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991794