DocumentCode :
2863460
Title :
Independent double-gate FinFET SRAM technology
Author :
Endo, Kazuhiko ; Uchi, Shi-ichi O. ; Matsukawa, Takashi ; Liu, Yongxun ; Masahara, Meishoku
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fYear :
2011
fDate :
21-24 June 2011
Firstpage :
1
Lastpage :
2
Abstract :
Independent-double-gate (IDG) FinFET SRAM technology has been developed. Vth controllable IDG-FinFET technology enables noise margin enhancement of SRAM cells. The IDG-FinFET is also effective for the reduction of variation effect due to the work function variation (WFV) of the TiN metal-gate.
Keywords :
MOSFET circuits; SRAM chips; integrated circuit manufacture; titanium compounds; work function; SRAM cells; TiN; independent double-gate FinFET SRAM technology; metal-gate; noise margin enhancement; work function variation; Fabrication; FinFETs; Leakage current; Logic gates; Noise; Random access memory; Tin; Double-gate; FinFET; SRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
ISSN :
2159-3523
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2011.5991796
Filename :
5991796
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2863460
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