• DocumentCode
    2863460
  • Title

    Independent double-gate FinFET SRAM technology

  • Author

    Endo, Kazuhiko ; Uchi, Shi-ichi O. ; Matsukawa, Takashi ; Liu, Yongxun ; Masahara, Meishoku

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
  • fYear
    2011
  • fDate
    21-24 June 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Independent-double-gate (IDG) FinFET SRAM technology has been developed. Vth controllable IDG-FinFET technology enables noise margin enhancement of SRAM cells. The IDG-FinFET is also effective for the reduction of variation effect due to the work function variation (WFV) of the TiN metal-gate.
  • Keywords
    MOSFET circuits; SRAM chips; integrated circuit manufacture; titanium compounds; work function; SRAM cells; TiN; independent double-gate FinFET SRAM technology; metal-gate; noise margin enhancement; work function variation; Fabrication; FinFETs; Leakage current; Logic gates; Noise; Random access memory; Tin; Double-gate; FinFET; SRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2011 IEEE 4th International
  • Conference_Location
    Tao-Yuan
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4577-0379-9
  • Electronic_ISBN
    2159-3523
  • Type

    conf

  • DOI
    10.1109/INEC.2011.5991796
  • Filename
    5991796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2863460