DocumentCode :
2863482
Title :
Resistive switching characteristics of zinc oxide (ZnO) resistive RAM with Al metal electrode
Author :
Lin, Cheng-Li ; Tang, Chi-Chang ; Wu, Shu-Ching ; Yang, Syuan-Ren ; Lai, Yi-Hsiu ; Wu, Shich-Chuan
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ. (FCU), Taichung, Taiwan
fYear :
2011
fDate :
21-24 June 2011
Firstpage :
1
Lastpage :
2
Abstract :
This work investigates the characteristics of ZnO film as resistive RAM (RRAM) using Al electrode. Effects of oxygen composition in ZnO film is also studied using different Ar/O2 gas flow ratio. From the electrical characteristics, the resistance ratio (HRS/LRS) can be up to 1010, and the set and reset voltage is lower to 0.5V and 2.5V, respectively.
Keywords :
electrodes; random-access storage; zinc compounds; RRAM; ZnO; metal electrode; resistive RAM; resistive switching; zinc oxide; Argon; Films; Fluid flow; Leakage current; Random access memory; Resistance; Zinc oxide; RRAM; Resistive RAM; ZnO; switching cycles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
ISSN :
2159-3523
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2011.5991798
Filename :
5991798
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2863482
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