DocumentCode
2863494
Title
Fabrication of double nanohoneycombs (Al/SiO2 ) with controllable size using nanosphere lithography
Author
Lee, Chao-Te ; Wu, Tzung-Chen ; Cho, Wen-Hao ; Kei, Chi-Chung ; Hsiao, Chien-Nan ; Ou, Sin-Liang
Author_Institution
Instrum. Technol. Res. Center, Nat. Appl. Res. Labs., Hsinchu, Taiwan
fYear
2011
fDate
21-24 June 2011
Firstpage
1
Lastpage
2
Abstract
The double nanohoneycombs (Al/SiO2) on glass and Si substrates were fabricated by the two-step processes of nanosphere lithography (NSL). The working parameters of the fabrication processes were analyzed and the factors affecting the size of nano-homeycombs, such as controlling nanosphere size, lift-off nanosphere and the second NSL process were elucidated. In the first NSL process, an ordered single layer of polystyrene (PS) nanosphere with a diameter of 1000 nm was spin-coated on the substrates. Then, the PS nanospheres were modified by oxygen plasma works as deposition masks. By Al film deposition and lift-off processes, we fabricated ordered periodic nano-homeycombs (Al) arrays. After the second NSL process and SiO2 film deposition, we fabricated ordered periodic double nanohomeycombs (Al/SiO2) arrays. This technique forming double nanohoneycombs, especially with desired period, is expected to be a candidate for wide nanostructure applications such as photonic crystals, optoelectronic devices, sensors, data storage, fuel cells, etc.
Keywords
aluminium; honeycomb structures; nanofabrication; nanolithography; periodic structures; silicon compounds; spin coating; sputtered coatings; Al-SiO2; controllable size; double nanohoneycomb; film deposition; lift-off nanosphere; nanosphere lithography; nanosphere size; nanostructure fabrication; ordered periodic nanohomeycomb array; polystyrene nanosphere; spin coating; Films; Lithography; Nanoscale devices; Plasmas; Process control; Sputtering; Substrates; double nanohoneycombs; nanosphere lithography and polystyrene nanosphere;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location
Tao-Yuan
ISSN
2159-3523
Print_ISBN
978-1-4577-0379-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2011.5991799
Filename
5991799
Link To Document