Title :
Electrically erasable buried gate PROM
Author :
Neugebauer, C. ; Burgess, Jonathan ; Stein, L.
Author_Institution :
General Electric Corporate Research & Development, Schenectady, NY, USA
Keywords :
Breakdown voltage; Capacitance; Circuits; Hot carriers; MOSFETs; Nonvolatile memory; PROM; Threshold voltage; Varactors; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155705
