DocumentCode

2863515

Title

Electrically erasable buried gate PROM

Author

Neugebauer, C. ; Burgess, Jonathan ; Stein, L.

Author_Institution

General Electric Corporate Research & Development, Schenectady, NY, USA

Volume

XX

fYear

1977

fDate

16-18 Feb. 1977

Firstpage

184

Lastpage

185

Keywords

Breakdown voltage; Capacitance; Circuits; Hot carriers; MOSFETs; Nonvolatile memory; PROM; Threshold voltage; Varactors; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1977.1155705

Filename

1155705