Title :
High performance, MOS EPROMs using a stacked-gate cell
Author :
Salsbury, P. ; Morgan, W. ; Perlegos, G. ; Simko, R.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Keywords :
Breakdown voltage; Capacitance; Circuit simulation; Decoding; Driver circuits; EPROM; Microprocessors; Nonvolatile memory; PROM; Production;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155707
