DocumentCode :
286356
Title :
Fundamental modelling of semiconductor power devices
Author :
Johnson, C. Mark
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
fYear :
1993
fDate :
34107
Firstpage :
42522
Lastpage :
42526
Abstract :
With the introduction of relatively cheap and powerful computers and a range of comprehensive software packages, many device manufacturers now make extensive use of computer aided analysis in the design of new devices. Although these techniques are beginning to find application in large area power devices, there is still much work to be done in determining necessary and sufficient conditions for accurate and reliable simulation. Discretised versions of semiconductor device equations must be formulated consistently across the full coupled set of equations, and an initially adequate mesh generation may become invalid with development of space-charge regions during transients
Keywords :
circuit CAD; digital simulation; mesh generation; power electronics; semiconductor device models; space charge; transients; computer aided analysis; mesh generation; necessary and sufficient conditions; semiconductor device equations; semiconductor power devices; simulation; software packages; space-charge regions; transients;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Coupling Electromagnetic to Other Fields, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
243266
Link To Document :
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