Title :
The study of an inducer-layer between red and blue emission for white organic light-emitting diodes
Author :
Lee, Sang Youn ; Kim, You Hyun ; Song, Wook ; Mei, Meng ; Kim, Nam Ho ; Kim, Woo Young
Author_Institution :
Dept. of Semicond. Display Eng., Hoseo Univ., Asan, South Korea
Abstract :
The white organic light-emitting diodes (WOLED) using, phosphorescent dopant, iridium (III) bis[(4,6-di-fluorophenyl)-pyridinato-N, C2] picolinate (Firpic) and fluorescent dopant, 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyliul-olidyl-9-enyl)-4H-pyran (DCJTB) were fabricated by employing two different types of inducer-layer such as N, N´-dicarbazoly-3,5-benzene (mCP) and 4,7-diphenyl-1,10-phenanthroline (Bphen). Luminous efficiency, max luminance, and Commission Internationale de l´Eclairage (CIEx,y) coordinates of the WOLED using Bphen as inducer layer were 8.72 cd/A at 5.61mA/cm2, CIEx,y(x=0.27, Y=0.37) at 11.11mA/cm2, and 12330cd/m2 at 205.82mA/cm2, respectively. These results demonstrated that Bphen attributed hole-electron recombination zone controlling electron injection through 3.2eV lowest unoccupied molecular orbital (LUMO) energy level and hole blocking by 6.4eV highest occupied molecular orbital (HOMO) energy level.
Keywords :
brightness; electron-hole recombination; energy states; molecular electronic states; organic light emitting diodes; phosphorescence; , 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyliul-olidyl-9-enyl)-4H-pyran; DCJTB; Firpic; HOMO; LUMO; blue emission; electron injection; energy level; fluorescent dopant; highest occupied molecular orbital; hole blocking; hole-electron recombination zone; inducer layer; iridium (III) bis[(4,6-di-fluorophenyl)-pyridinato-N, C2] picolinate; lowest unoccupied molecular orbital; luminous efficiency; maximum luminance; phosphorescent dopant; red emission; white organic light emitting diodes; Charge carrier processes; Color; Current density; Energy states; Fluorescence; Organic light emitting diodes; Organic materials; HOMO; Inducer-layer; LUMO); WOLEDs;
Conference_Titel :
Nanoelectronics Conference (INEC), 2011 IEEE 4th International
Conference_Location :
Tao-Yuan
Print_ISBN :
978-1-4577-0379-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2011.5991807