Title :
High-efficiency MESFET linear amplifier operating at 4 GHz
Author :
Sechi, F. ; Ho Huang ; Riginos, V.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Keywords :
Bandwidth; Circuits; Gain; High power amplifiers; Impedance; MESFETs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1977.1155713
