DocumentCode :
2863734
Title :
Progress with high efficiency IMPATT diodes
Author :
Gewartowski, J.
Author_Institution :
Bell Telephone Laboratories, Allentown, PA, USA
Volume :
XX
fYear :
1977
fDate :
16-18 Feb. 1977
Firstpage :
91
Lastpage :
91
Keywords :
Doping profiles; High power amplifiers; Noise level; Noise measurement; Power generation; Radio frequency; Radiofrequency amplifiers; Schottky diodes; Semiconductor device noise; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1977 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1977.1155719
Filename :
1155719
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2863734
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